We analyze dynamic properties of vertical graphene-base hot-electrontransistors (GB-HETs) and consider their operation as detectors of terahertz(THz) radiation using the developed device model. The GB-HET model accounts forthe tunneling electron injection from the emitter, electron propagation acrossthe barrier layers with the partial capture into the GB, and theself-consistent oscillations of the electric potential and the hole density inthe GB (plasma oscillations), as well as the quantum capacitance and theelectron transit-time effects. Using the proposed device model, we calculatethe responsivity of GB-HETs operating as THz detectors as a function of thesignal frequency, applied bias voltages, and the structural parameters. Theinclusion of the plasmonic effect leads to the possibility of the HET-GBToperation at the frequencies significantly exceeding those limited by thecharacteristic RC-time. It is found that the responsivity of GB-HETs with asufficiently perfect GB exhibits sharp resonant maxima in the THz range offrequencies associated with the excitation of plasma oscillations. Thepositions of these maxima are controlled by the applied bias voltages. TheGB-HETs can compete with and even surpass other plasmonic THz detectors.
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